Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement

摘要

In order to develop a method to extract the parameters of the two inherentSchottky contacts from a single current-voltage (I-V) characteristic curve, theI-V characteristics of metal-semiconductor-metal (MSM) diodes with asymmetricSchottky barrier heights are theoretically investigated using the thermionicemission model. The MSM diode structure is commonly used because an additionalMS interface is required for the electrical characterization of MS diodes. Afinite charge-injection barrier is generally formed at the additionalinterface. When a local maximum was detected in the first-order derivative ofthe measured I-V characteristics for a MSM diode, the parameters for theSchottky contacts, the zero-bias barrier heights of both MS interfaces, theseries resistance of the MSM diode and the effective ideality factor for the MSdiode with a higher barrier could be extracted using this method.